IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
♠ Apejuwe ọja
| Irisi ọja | Ifilelẹ Ifarahan |
| Olupese: | Infineon |
| Ẹka Ọja: | MOSFET |
| RoHS: | Awọn alaye |
| Imọ ọna ẹrọ: | Si |
| Iṣagbesori ara: | SMD/SMT |
| Package/Apo: | LATI-252-3 |
| Transistor Polarity: | N-ikanni |
| Nọmba awọn ikanni: | 1 ikanni |
| Vds - Foliteji Imudanu Orisun: | 40 V |
| Id - Isanmi Tesiwaju lọwọlọwọ: | 50 A |
| Rds Lori – Idoko-Orisun Resistance: | 9.3 mohms |
| Vgs - Foliteji-Orisun: | - 20 V, + 20 V |
| Vgs th - Foliteji Ibalẹ Ilẹ-Orisun: | 3 V |
| Qg - idiyele ẹnu-ọna: | 18,2 nC |
| Iwọn Iṣiṣẹ ti o kere julọ: | - 55 C |
| Iwọn Iṣiṣẹ ti o pọju: | + 175 C |
| Pd - Agbara Pipa: | 41 W |
| Ipo ikanni: | Imudara |
| Ijẹẹri: | AEC-Q101 |
| Orukọ iṣowo: | OptiMOS |
| Iṣakojọpọ: | Reli |
| Iṣakojọpọ: | Teepu Ge |
| Brand: | Awọn imọ-ẹrọ Infineon |
| Iṣeto: | Nikan |
| Akoko Igba Irẹdanu Ewe: | 5 ns |
| Giga: | 2.3 mm |
| Gigun: | 6.5 mm |
| Iru ọja: | MOSFET |
| Akoko dide: | 7 ns |
| jara: | OptiMOS-T2 |
| Opoiye Pack Factory: | 2500 |
| Ẹka: | MOSFETs |
| Irú Transistor: | 1 N-ikanni |
| Aago Idaduro Pa Aṣoju: | 4 ns |
| Aago Idaduro Tan-an Aṣoju: | 5 ns |
| Ìbú: | 6,22 mm |
| Apa # Awọn orukọ: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
| Iwọn Ẹyọ: | 330 mg |
N-ikanni – Ipo imudara
• AEC oṣiṣẹ
• MSL1 soke si 260°C tente isọdọtun
• 175°C otutu ti nṣiṣẹ
• Ọja Alawọ ewe (ibaramu RoHS)
• 100% owusuwusu ni idanwo
