IKW50N65EH5XKSA1 IGBT Transistors INDUSTRY 14
♠ Apejuwe ọja
| Irisi ọja | Ifilelẹ Ifarahan |
| Olupese: | Infineon |
| Ẹka Ọja: | Awọn transistors IGBT |
| Imọ ọna ẹrọ: | Si |
| Apo / Apo: | LATI-247-3 |
| Iṣagbesori ara: | Nipasẹ Iho |
| Iṣeto: | Nikan |
| Alakojo- Emitter Voltage VCEO Max: | 650 V |
| Foliteji Ikunrere Olugba-Emitter: | 1.65 V |
| Foliteji Emitter ti o pọju: | 20 V |
| Alakojo Tesiwaju Lọwọlọwọ ni 25 C: | 80 A |
| Pd - Agbara Pipa: | 275 W |
| Iwọn Iṣiṣẹ ti o kere julọ: | -40 C |
| Iwọn Iṣiṣẹ ti o pọju: | + 175 C |
| jara: | Trenchstop IGBT5 |
| Iṣakojọpọ: | Tube |
| Brand: | Awọn imọ-ẹrọ Infineon |
| Jijo Ẹnu-ọna Emitter lọwọlọwọ: | 100 nA |
| Giga: | 20,7 mm |
| Gigun: | 15,87 mm |
| Iru ọja: | Awọn transistors IGBT |
| Opoiye Pack Factory: | 240 |
| Ẹka: | Awọn IGBT |
| Orukọ iṣowo: | TRENCHSTOP |
| Ìbú: | 5,31 mm |
| Apa # Awọn orukọ: | IKW50N65EH5 SP001257944 |
| Iwọn Ẹyọ: | 0,213383 iwon |
HighspeedH5 ọna ẹrọ ẹbọ
• Ti o dara ju-ni-Classefficiencyinhardswitchingandresonant topologies
•Plugand playreplacement of previousgenerationIGBTs
• 650Vbreakdownvoltage
• LowatechargeQG
•IGBTcopackedwithful-ti won wonRAPID1fastandsoftantiparallel diode
• O pọju iwọn otutu175°C
• QualifiedaccordingsiJEDECfortarrgetapplications
•Pb-freeleadplating;RoHS ni ifaramọ
• CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igt/
• Awọn ipese agbara ti ko ni idilọwọ
• Solarconverters
• Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
